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E 44N / E 44NB
HEXFET
(R)
Power MOSFET
HEXFET(R) Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) =17.5m
G S
ID = 49A
Description
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
E 44N
VDSS = 54V RDS(on) =20m ID = 49A
E 44NB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
49 35 160 94 0.63 20 25 9.4 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
1.5 --- 62
Units
C/W
1
HEXFET
E 44N / E 44NB (R)
Power MOSFET
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min. 55/54 --- --- 2.0 17 --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units --- --- V 0.058 --- V/C --- 17.5 m --- 4.0 V --- --- S --- 25 A --- 250 --- 100 nA --- -100 --- 63 --- 14 nC --- 23 12 --- 60 --- ns 44 --- 45 --- 4.5 --- nH 7.5 ---
--- 1470 --- --- 360 --- --- 88 --- --- 530 150
pF mJ
Conditions 0V, I D = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 25A VDS = VGS , ID = 250A VDS = 25V, ID = 25A VDS = 54V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150C VGS = 20V VGS = -20V ID = 25A VDS = 44V VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 25A RG = 12 VGS = 10V, See Fig. 10 Between lead, 6mm (0.25in.) G from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 IAS = 25A, L = 0.47mH V GS =
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 49 --- --- showing the A G integral reverse --- --- 160 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25A, VGS = 0V --- 63 95 ns TJ = 25C, IF = 25A --- 170 260 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ISD 25A, di/dt 230A/s, VDD V(BR)DSS,
TJ 175C
Starting TJ = 25C, L = 0.48mH
RG = 25, I AS = 25A. (See Figure 12)
Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175C .
2

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